![]() Controlling packaging encapsulant leakage
专利摘要:
An integrated circuit package may be formed in part with an encapsulated region. Outflow of the encapsulant across critical electrical elements can be prevented by providing a cavity which collects encapsulant outflow between the region of encapsulation and the region where the critical components are situated. In one embodiment of the present invention, a surface may include a first portion covered by solder resist, having an area populated by bond pads, and a second portion which is encapsulated. Encapsulant flow over the bond pads is prevented by forming an opening in the solder resist proximate to the second portion to collect the encapsulant before it reaches the bond pads. 公开号:US20010008780A1 申请号:US09/789,892 申请日:2001-02-21 公开日:2001-07-19 发明作者:Patrick Tandy;Joseph Brand;Brad Rumsey;Steven Stephenson;David Corisis;Todd Bolken;Edward Schrock;Brenton Dickey 申请人:Tandy Patrick W.;Brand Joseph M.;Rumsey Brad D.;Stephenson Steven R.;Corisis David J.;Bolken Todd O.;Schrock Edward A.;Dickey Brenton L.; IPC主号:H01L23-3107
专利说明:
[0001] This invention relates generally to packaging electronic components and in particular embodiments to encapsulating laminate packages. [0001] [0002] Laminate packages may be made of alternating core material and conductive layers. The core acts as a stiffener and insulator while the conductive layers are etched to leave a trace for electrical purposes. The laminate structure may have a solder resist selectively screen printed onto specific areas of the structure for solder protection. [0002] [0003] A laminate package may be encapsulated by enclosing the unencapsulated package inside two halves of a mold. At the juncture of the two mold faces, encapsulants sometimes leak forming what is known as flash. The encapsulant leaking between the two mold halves may actually contaminate the electrical components that come in contact with the encapsulant. Generally when this happens, the devices are deemed defective and the entire laminated package is discarded. [0003] [0004] In some cases, the leakage of encapsulant material is a result of the bleeding out of the resin vehicle from the overall epoxy. See, Ireland, James E., “Epoxy Bleeding Out in Ceramic Chip Carriers,” ISHM Journal, Vol. 5, No. 1. Regardless of whether the contamination occurs because of the bleed out of the resin vehicle from the overall adhesive or from the leakage of the overall resin itself, the effects of such leakage on electronic components may be catastrophic. [0004] [0005] Thus, there is a need to prevent flash contamination of the electrical components of electrical packages and particularly for preventing such contamination in the course of encapsulating laminate packages. [0005] SUMMARY [0006] In accordance with one aspect, a process for encapsulating integrated circuits includes defining an encapsulation cavity about an integrated circuit die. The cavity is filled with an encapsulant. The outflow of encapsulant is controlled by providing a collection reservoir proximate to the cavity. [0006] [0007] Other aspects are set forth in the accompanying specification and claims. [0007] BRIEF DESCRIPTION OF THE DRAWINGS [0008] FIG. 1 is a greatly enlarged top plan view of one embodiment of the present invention; [0008] [0009] FIG. 2 is an enlarged cross-sectional view taken generally along the line [0009] 2-2 in FIG. 1 when the device shown in FIG. 1 is in position within an encapsulation mold; [0010] FIG. 3 is a greatly enlarged cross-sectional view of a portion of the device shown in FIG. 2 in the process of being molded; and [0010] [0011] FIG. 4 is an enlarged cross-sectional view taken generally along the line [0011] 2-2 in the embodiment shown in FIG. 1 after the device has been completed by attaching solder balls. DETAILED DESCRIPTION [0012] Referring to FIG. 1, a laminate package [0012] 10 may include an I-shaped core 11 punctuated by alignment openings 12. A central encapsulated region 14 is bounded on either side by a flash cavity 16 and a plurality of ball pads 20. Each ball pad is situated inside the opening left in a solder resist coating whose extent is defined by the edges 18. Each of the cavities 16 basically provides an effective barrier to encapsulant intended to form the region 14. However, without the interposition of the cavities 16, encapsulant could extend outwardly from the region 14 and overflow onto the pads 20. This could result in contamination and possible destruction of the core 11. [0013] Referring to FIG. 2, the core [0013] 11 may be affixed to an integrated circuit chip or die 30. Any conventional die affixation technique may be utilized. For example, the die 30 may be secured to the core 11 using adhesive, such as epoxy, adhesive tape such as lead-on-chip (LOC) tape or any other available technique. Wire bond wires 26 may make contact with contacts on the die 30 and extend upwardly to make electrical contact to corresponding contacts on the upper surface of the core 11. The bond wires 26 extend through the passage 25 which is filled with encapsulant 14. [0014] The laminate package [0014] 10 may be encapsulated between two mold halves 32 a and 32 b. The mold halves define a parting line 34. The upper mold half 32 a includes an elliptical chamber 35 which defines the encapsulated region 14. [0015] While in the mold, the encapsulated region [0015] 14 is filled with an encapsulant. The encapsulant pots the bond wires 26 that are bonded on one end to the die 30 and extend upwardly to contact the upper surface of the core 11. The wires 26 make contact with contacts 24 (shown in FIG. 4) situated between a cavity 16 and the region 14. [0016] Referring to FIG. 3, encapsulant “A” from the region [0016] 14 may tend to extend outwardly along the parting line 34. In such case, it flows over the solder resist 18 and into the cavity 16 defined in the solder resist 18. Thus, the cavity 16 provides a reservoir to collect the encapsulant overflow. The encapsulant readily fills the reservoir 16 because of its greater open area which provides pressure relief to the encapsulant which squeezes out between any slight gaps between the mold halves 32 a and 32 b. Thus, the encapsulant flows along the parting line 34 when the two mold halves 32 a and 32 b are not perfectly pressed together. The overflowing encapsulant then flows into the cavity 16 where it may be retained until it solidifies. In this way, the flow in the direction of the arrows A is blocked from extending to the pads 20 to the left in FIG. 3. [0017] Because the cavity [0017] 16 may be simply formed by appropriate patterning of the solder resist 18, the provision of the cavities is relatively inexpensive if not cost free. Since apertures must be defined in the solder resist to form the edges 18 surrounding the bond pads 20, the pattern for the cavities 16 may be included at the same time. That is, the cavity 16 on either side of the encapsulated region 14 may be defined during the process of patterning the solder resist to form the openings that define the edges 18 around pads 20. [0018] Referring now to FIG. 4, which shows the device of FIG. 1 in cross-section after solder balls [0018] 28 have been positioned, the die 30 is overlaid by the laminate package 10 which has the central opening 25 which is filled with encapsulant. The upper surface of the encapsulated region 14 may have an elliptical configuration, in one example, because of the shape of the upper mold half 32 a (FIG. 2). As a result, the bond wires 26, which extend from the die 30 up to the contacts 24 on the upper surface of the laminate package 10, are completely potted. [0019] The mold half [0019] 32 b may define a cavity 50 for encapsulating the die 30 as shown in FIG. 2. The encapsulation 52 then covers the die 30, as shown in FIG. 4. [0020] The contacts [0020] 24 may electrically communicate, via traces 22 which extend through the core 11, with various pads 20. The pads 20 may in turn electrically couple to solder balls 28 in a conventional flip-chip or ball grid array packaging embodiment. Thus, the solder balls 28 are capable of communicating with the world outside of the package 10. In this way, the laminate package 10 provides a convenient interconnection medium for allowing the die 30 to communicate with external devices. [0021] The solder resist includes the openings to define the edges [0021] 18 to allow for the imposition of the solder balls 28 as well as the openings which define the cavities 16 to receive any overflow of the encapsulant material. By positioning a cavity 16 between the encapsulated region 14 and the bond pads 20 for the solder balls 28, the critical electrical contact areas can be protected from contamination by encapsulant flash. [0022] While non-solder mask defined pads (NSDP) are illustrated, solder mask defined pads (SDP) may be used as well. Although a laminate package is illustrated, other packaging configurations may be used as well including those using an interposer. [0022] [0023] While the present invention has been described with respect to a limited number of embodiments, those skilled in the art will appreciate numerous modifications and variations therefrom. It is intended that the appended claims cover all such modifications and variations as fall within the true spirit and scope of this present invention. [0023]
权利要求:
Claims (30) [1" id="US-20010008780-A1-CLM-00001] 1. A process for encapsulating integrated circuits comprising: defining an encapsulation chamber about an integrated circuit die; filling said chamber with an encapsulant; and controlling outflow of encapsulant from said chamber by providing a collection cavity proximate to said chamber. [2" id="US-20010008780-A1-CLM-00002] 2. The method of claim 1 further including connecting a die to a first side of a support structure and making electrical connections from said die through an opening in said structure to a second side of said structure. [3" id="US-20010008780-A1-CLM-00003] 3. The method of claim 2 including covering the second side of said structure with a solder resist and leaving bond pad openings in said solder resist. [4" id="US-20010008780-A1-CLM-00004] 4. The method of claim 3 further including defining a solder resist free region to define said collection cavity proximate to said chamber. [5" id="US-20010008780-A1-CLM-00005] 5. The method of claim 4 including defining a plurality of ball pads on said structure adjacent said opening and positioning said cavity between said opening and said ball pads. [6" id="US-20010008780-A1-CLM-00006] 6. The method of claim 5 further including securing a plurality of solder balls to said ball pads. [7" id="US-20010008780-A1-CLM-00007] 7. The method of claim 1 wherein said cavity is formed in packaging associated with said die. [8" id="US-20010008780-A1-CLM-00008] 8. The method of claim 1 including physically coupling said die to a structure, electrically coupling said die to said structure, providing bond pads on said structure, and positioning said cavity on said structure. [9" id="US-20010008780-A1-CLM-00009] 9. The method of claim 8 including providing a passage through said structure for wires to couple said die to said structure, filling said passage with encapsulant, and positioning said cavity between said bond pads and said passage. [10" id="US-20010008780-A1-CLM-00010] 10. A support structure for an integrated circuit die comprising: a first surface including a bond pad; a first region defined in said first surface to receive encapsulant; and a cavity defined in said first surface between a bond pad and said region, said cavity adapted to collect encapsulant overflow from said opening. [11" id="US-20010008780-A1-CLM-00011] 11. The structure of claim 10 including a laminate body, said first surface defined on said laminate body. [12" id="US-20010008780-A1-CLM-00012] 12. The structure of claim 10 including a body, said body covered by a solder resist layer, said solder resist layer defining said first surface. [13" id="US-20010008780-A1-CLM-00013] 13. The structure of claim 12 including an opening in said solder resist layer for said bond pad. [14" id="US-20010008780-A1-CLM-00014] 14. The structure of claim 13 wherein said cavity is defined by an opening in said solder resist layer. [15" id="US-20010008780-A1-CLM-00015] 15. The structure of claim 14 wherein said cavity is defined by an area where no solder resist exists over said body. [16" id="US-20010008780-A1-CLM-00016] 16. The structure of claim 11 wherein said region is defined by an opening extending through said laminate body. [17" id="US-20010008780-A1-CLM-00017] 17. A method for encapsulating an electronic device comprising: encapsulating at least a portion of said electronic device; and preventing outflow of encapsulation material from said encapsulated portion to a non-encapsulated portion by providing an encapsulation receiving cavity between said encapsulated portion and said non-encapsulated portion. [18" id="US-20010008780-A1-CLM-00018] 18. The method of claim 17 including covering said non-encapsulated portion with a solder resist material, forming at least one opening in said solder resist material for a bond pad, and forming said cavity by forming a second opening in said solder resist material. [19" id="US-20010008780-A1-CLM-00019] 19. The method of claim 18 including defining said cavity between a bond pad and said encapsulated region. [20" id="US-20010008780-A1-CLM-00020] 20. The method of claim 19 including patterning said solder mask material to form an opening for said bond pad and to form an opening to create said cavity. [21" id="US-20010008780-A1-CLM-00021] 21. A laminate package comprising: a laminate core having an opening through said core from a first side of said core to a second side of said core; a die coupled to said core on said first side of said core; a bond pad defined on said second side of said core; and an encapsulation flash receiving cavity between said bond pads and said opening. [22" id="US-20010008780-A1-CLM-00022] 22. The package of claim 21 including a solder resist material on said second side, said solder resist material having an opening for said bond pad. [23" id="US-20010008780-A1-CLM-00023] 23. The package of claim 22 including an opening in said solder resist to define said cavity. [24" id="US-20010008780-A1-CLM-00024] 24. The package of claim 23 including wire bond wires extending from said die to said second side of said core. [25" id="US-20010008780-A1-CLM-00025] 25. The package of claim 24 including a bond pad on either side of said opening, and a cavity positioned on each side of said opening between said opening and a bond pad. [26" id="US-20010008780-A1-CLM-00026] 26. A method for packaging integrated circuit devices comprising: defining an encapsulated region on a support structure; defining bond pads on an unencapsulated region of said support structure; depositing a solder resist material on said unencapsulated portion of said support structure; and defining openings in said solder resist material for said bond pads and defining an additional opening between said bond pads and said encapsulated region to collect encapsulation overflow from said encapsulated region. [27" id="US-20010008780-A1-CLM-00027] 27. The method of claim 26 including attaching a die to said support structure. [28" id="US-20010008780-A1-CLM-00028] 28. The method of claim 27 including forming an opening through said support structure and wire bonding a die attached to one side of said support structure to contacts on said second side of said support structure. [29" id="US-20010008780-A1-CLM-00029] 29. The method of claim 28 including encapsulating said opening to form said encapsulated region. [30" id="US-20010008780-A1-CLM-00030] 30. The method of claim 26 including defining the openings for said bond pads and for said cavity by patterning said solder resist layer.
类似技术:
公开号 | 公开日 | 专利标题 US6210992B1|2001-04-03|Controlling packaging encapsulant leakage US6432742B1|2002-08-13|Methods of forming drop-in heat spreader plastic ball grid array | packages US6329220B1|2001-12-11|Packages for semiconductor die US5841192A|1998-11-24|Injection molded ball grid array casing US7772687B2|2010-08-10|Multiple electronic component containing substrate KR100211421B1|1999-08-02|Semiconductor chip package using flexible circuit board with central opening US6781248B2|2004-08-24|Method for encapsulating intermediate conductive elements connecting a semiconductor die to a substrate and semiconductor devices so packaged US6995448B2|2006-02-07|Semiconductor package including passive elements and method of manufacture JP2009520366A|2009-05-21|Multilayer molded package and method for forming the same US20030183950A1|2003-10-02|Semiconductor die packages with standard ball grid array footprint and method for assembling the same JP4919103B2|2012-04-18|Land grid array semiconductor device package, assembly including the package, and manufacturing method US6262473B1|2001-07-17|Film carrier tape and semiconductor device, method of making the same and circuit board JPH0846136A|1996-02-16|Semiconductor device KR20070015014A|2007-02-01|Method of making a stacked die package KR19990068199A|1999-08-25|Package for semiconductor device having frame-shaped mold part and fabricating method thereof KR100357883B1|2003-01-15|Semiconductor device and its manufacturing method KR100610916B1|2006-08-09|Semiconductor package KR100391124B1|2003-07-12|Base of semiconductor package, semiconductor package using the same and method of manufacturing thereof KR20000015580A|2000-03-15|Circuit tape for semiconductor package KR100244509B1|2000-02-01|Fabrication method for semiconductor package KR100379085B1|2003-07-10|Sealing Method of Semiconductor Device KR100369396B1|2003-01-29|circuit board and manufacturing method of semiconductor package using the same KR20010010131A|2001-02-05|Method for fabricating chip on board package JP3646663B2|2005-05-11|Manufacturing method of semiconductor device KR20000027523A|2000-05-15|Micro ball grid array package
同族专利:
公开号 | 公开日 US6521980B1|2003-02-18| US6395579B2|2002-05-28| US6210992B1|2001-04-03|
引用文献:
公开号 | 申请日 | 公开日 | 申请人 | 专利标题 US20040217389A1|2002-05-24|2004-11-04|Hall Frank L.|Apparatus and method for molding a semiconductor die package with enhanced thermal conductivity| US6963142B2|2001-10-26|2005-11-08|Micron Technology, Inc.|Flip chip integrated package mount support| US20060270211A1|2005-05-31|2006-11-30|Shinko Electric Industries Co., Ltd.|Method of fabricating wiring board and method of fabricating semiconductor device| US20120241956A1|2003-03-11|2012-09-27|Micron Technology, Inc.|Techniques for packaging multiple device components|US4218701A|1978-07-24|1980-08-19|Citizen Watch Co., Ltd.|Package for an integrated circuit having a container with support bars| FR2645680B1|1989-04-07|1994-04-29|Thomson Microelectronics Sa Sg|ENCAPSULATION OF ELECTRONIC MODULES AND MANUFACTURING METHOD| JP2780649B2|1994-09-30|1998-07-30|日本電気株式会社|Semiconductor device| US6093970A|1994-11-22|2000-07-25|Sony Corporation|Semiconductor device and method for manufacturing the same| US5661086A|1995-03-28|1997-08-26|Mitsui High-Tec, Inc.|Process for manufacturing a plurality of strip lead frame semiconductor devices| US5677566A|1995-05-08|1997-10-14|Micron Technology, Inc.|Semiconductor chip package| JPH0917919A|1995-06-29|1997-01-17|Fujitsu Ltd|Semiconductor device| US6013948A|1995-11-27|2000-01-11|Micron Technology, Inc.|Stackable chip scale semiconductor package with mating contacts on opposed surfaces| CA2180807C|1996-07-09|2002-11-05|Lynda Boutin|Integrated circuit chip package and encapsulation process| JP3695893B2|1996-12-03|2005-09-14|沖電気工業株式会社|Semiconductor device, manufacturing method and mounting method thereof| KR100211421B1|1997-06-18|1999-08-02|윤종용|Semiconductor chip package using flexible circuit board with central opening| KR100267667B1|1998-07-18|2000-10-16|윤종용|Method of manufacturing semiconductor package devices of center pad type| JP2000150730A|1998-11-17|2000-05-30|Fujitsu Ltd|Semiconductor device and its manufacture| US6143581A|1999-02-22|2000-11-07|Micron Technology, Inc.|Asymmetric transfer molding method and an asymmetric encapsulation made therefrom| TW409377B|1999-05-21|2000-10-21|Siliconware Precision Industries Co Ltd|Small scale ball grid array package| US6146924A|1999-08-06|2000-11-14|Vanguard International Semiconductor Corporation|Magnetic insert into mold cavity to prevent resin bleeding from bond area of pre-mold plastic chip carrier during molding process| US6210992B1|1999-08-31|2001-04-03|Micron Technology, Inc.|Controlling packaging encapsulant leakage|US6210992B1|1999-08-31|2001-04-03|Micron Technology, Inc.|Controlling packaging encapsulant leakage| US6534861B1|1999-11-15|2003-03-18|Substrate Technologies Incorporated|Ball grid substrate for lead-on-chip semiconductor package| US6331453B1|1999-12-16|2001-12-18|Micron Technology, Inc.|Method for fabricating semiconductor packages using mold tooling fixture with flash control cavities| US6344401B1|2000-03-09|2002-02-05|Atmel Corporation|Method of forming a stacked-die integrated circuit chip package on a water level| US6558600B1|2000-05-04|2003-05-06|Micron Technology, Inc.|Method for packaging microelectronic substrates| US6656769B2|2000-05-08|2003-12-02|Micron Technology, Inc.|Method and apparatus for distributing mold material in a mold for packaging microelectronic devices| US6589820B1|2000-06-16|2003-07-08|Micron Technology, Inc.|Method and apparatus for packaging a microelectronic die| KR20020000012A|2000-06-20|2002-01-04|윤종용|Method for manufacturing chip scale package having slits| US6365434B1|2000-06-28|2002-04-02|Micron Technology, Inc.|Method and apparatus for reduced flash encapsulation of microelectronic devices| US6576494B1|2000-06-28|2003-06-10|Micron Technology, Inc.|Recessed encapsulated microelectronic devices and methods for formation| US7273769B1|2000-08-16|2007-09-25|Micron Technology, Inc.|Method and apparatus for removing encapsulating material from a packaged microelectronic device| US6602430B1|2000-08-18|2003-08-05|Micron Technology, Inc.|Methods for finishing microelectronic device packages| US6483044B1|2000-08-23|2002-11-19|Micron Technology, Inc.|Interconnecting substrates for electrical coupling of microelectronic components| US6979595B1|2000-08-24|2005-12-27|Micron Technology, Inc.|Packaged microelectronic devices with pressure release elements and methods for manufacturing and using such packaged microelectronic devices| US6838760B1|2000-08-28|2005-01-04|Micron Technology, Inc.|Packaged microelectronic devices with interconnecting units| US6552436B2|2000-12-08|2003-04-22|Motorola, Inc.|Semiconductor device having a ball grid array and method therefor| JP3941481B2|2000-12-22|2007-07-04|セイコーエプソン株式会社|Liquid crystal display device and electronic device| DE10127009A1|2001-06-05|2002-12-12|Infineon Technologies Ag|Plastic housing used for packing semiconductor chips comprises semiconductor chips arranged in lines and gaps| US6564979B2|2001-07-18|2003-05-20|Micron Technology, Inc.|Method and apparatus for dispensing adhesive on microelectronic substrate supports| DE10139985B4|2001-08-22|2005-10-27|Infineon Technologies Ag|Electronic component with a semiconductor chip and method for its production| SG111919A1|2001-08-29|2005-06-29|Micron Technology Inc|Packaged microelectronic devices and methods of forming same| US6969918B1|2001-08-30|2005-11-29|Micron Technology, Inc.|System for fabricating semiconductor components using mold cavities having runners configured to minimize venting| US6692987B2|2001-12-12|2004-02-17|Micron Technology, Inc.|BOC BGA package for die with I-shaped bond pad layout| SG118103A1|2001-12-12|2006-01-27|Micron Technology Inc|BOC BGA package for die with I-shaped bond pad layout| US6622380B1|2002-02-12|2003-09-23|Micron Technology, Inc.|Methods for manufacturing microelectronic devices and methods for mounting microelectronic packages to circuit boards| US7109588B2|2002-04-04|2006-09-19|Micron Technology, Inc.|Method and apparatus for attaching microelectronic substrates and support members| KR100510486B1|2002-04-08|2005-08-26|삼성전자주식회사|Semiconductor package for a chip having a integrated circuitry in both side and manufacturing method thereof| US20030223181A1|2002-05-28|2003-12-04|Micron Technology, Inc.|Electronic device package| US7067905B2|2002-08-08|2006-06-27|Micron Technology, Inc.|Packaged microelectronic devices including first and second casings| SG120879A1|2002-08-08|2006-04-26|Micron Technology Inc|Packaged microelectronic components| SG127684A1|2002-08-19|2006-12-29|Micron Technology Inc|Packaged microelectronic component assemblies| US6740546B2|2002-08-21|2004-05-25|Micron Technology, Inc.|Packaged microelectronic devices and methods for assembling microelectronic devices| SG114585A1|2002-11-22|2005-09-28|Micron Technology Inc|Packaged microelectronic component assemblies| US6903464B2|2003-01-30|2005-06-07|Micron Technology, Inc.|Semiconductor die package| US6879050B2|2003-02-11|2005-04-12|Micron Technology, Inc.|Packaged microelectronic devices and methods for packaging microelectronic devices| SG143931A1|2003-03-04|2008-07-29|Micron Technology Inc|Microelectronic component assemblies employing lead frames having reduced-thickness inner lengths| US6921860B2|2003-03-18|2005-07-26|Micron Technology, Inc.|Microelectronic component assemblies having exposed contacts| US7368810B2|2003-08-29|2008-05-06|Micron Technology, Inc.|Invertible microfeature device packages| SG153627A1|2003-10-31|2009-07-29|Micron Technology Inc|Reduced footprint packaged microelectronic components and methods for manufacturing such microelectronic components| KR100510556B1|2003-11-11|2005-08-26|삼성전자주식회사|Semiconductor package having ultra thin thickness and method for manufacturing the same| TWI239583B|2004-05-12|2005-09-11|Siliconware Precision Industries Co Ltd|Semiconductor package and method for fabricating the same| SG145547A1|2004-07-23|2008-09-29|Micron Technology Inc|Microelectronic component assemblies with recessed wire bonds and methods of making same| US7157310B2|2004-09-01|2007-01-02|Micron Technology, Inc.|Methods for packaging microfeature devices and microfeature devices formed by such methods| TWI234861B|2004-09-30|2005-06-21|Via Tech Inc|Chip package| US8278751B2|2005-02-08|2012-10-02|Micron Technology, Inc.|Methods of adhering microfeature workpieces, including a chip, to a support member| US20060261498A1|2005-05-17|2006-11-23|Micron Technology, Inc.|Methods and apparatuses for encapsulating microelectronic devices| KR100697624B1|2005-07-18|2007-03-22|삼성전자주식회사|Package substrate having surface structure adapted for adhesive flow control and semiconductor package using the same| US7429799B1|2005-07-27|2008-09-30|Amkor Technology, Inc.|Land patterns for a semiconductor stacking structure and method therefor| US7807505B2|2005-08-30|2010-10-05|Micron Technology, Inc.|Methods for wafer-level packaging of microfeature devices and microfeature devices formed using such methods| US7745944B2|2005-08-31|2010-06-29|Micron Technology, Inc.|Microelectronic devices having intermediate contacts for connection to interposer substrates, and associated methods of packaging microelectronic devices with intermediate contacts| US20070148820A1|2005-12-22|2007-06-28|Micron Technology, Inc.|Microelectronic devices and methods for manufacturing microelectronic devices| SG133445A1|2005-12-29|2007-07-30|Micron Technology Inc|Methods for packaging microelectronic devices and microelectronic devices formed using such methods| SG135074A1|2006-02-28|2007-09-28|Micron Technology Inc|Microelectronic devices, stacked microelectronic devices, and methods for manufacturing such devices| SG172743A1|2006-03-29|2011-07-28|Micron Technology Inc|Packaged microelectronic devices recessed in support member cavities, and associated methods| TWM305962U|2006-04-21|2007-02-01|Powertech Technology Inc|Ball grid array package structure| US7910385B2|2006-05-12|2011-03-22|Micron Technology, Inc.|Method of fabricating microelectronic devices| US20080116574A1|2006-11-17|2008-05-22|Powertech Technology Inc.|BGA package with encapsulation on bottom of substrate| US7833456B2|2007-02-23|2010-11-16|Micron Technology, Inc.|Systems and methods for compressing an encapsulant adjacent a semiconductor workpiece| US7955898B2|2007-03-13|2011-06-07|Micron Technology, Inc.|Packaged microelectronic devices and methods for manufacturing packaged microelectronic devices| US7659151B2|2007-04-12|2010-02-09|Micron Technology, Inc.|Flip chip with interposer, and methods of making same| KR101614856B1|2009-10-12|2016-04-22|삼성전자주식회사|Wiring substrate for a semiconductor chip, semiconductor package having the wiring substrate and method of manufacturing the semiconductor package| US20130341807A1|2012-06-25|2013-12-26|Po-Chun Lin|Semiconductor package structure| KR20160006330A|2014-07-08|2016-01-19|삼성전자주식회사|Semiconductor Package|
法律状态:
2002-05-10| STCF| Information on status: patent grant|Free format text: PATENTED CASE | 2005-11-04| FPAY| Fee payment|Year of fee payment: 4 | 2009-10-28| FPAY| Fee payment|Year of fee payment: 8 | 2013-10-30| FPAY| Fee payment|Year of fee payment: 12 | 2016-05-12| AS| Assignment|Owner name: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT, CALIFORNIA Free format text: SECURITY INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:038669/0001 Effective date: 20160426 Owner name: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGEN Free format text: SECURITY INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:038669/0001 Effective date: 20160426 | 2016-06-02| AS| Assignment|Owner name: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT, MARYLAND Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:038954/0001 Effective date: 20160426 Owner name: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:038954/0001 Effective date: 20160426 | 2017-06-08| AS| Assignment|Owner name: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT, CALIFORNIA Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:043079/0001 Effective date: 20160426 Owner name: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGEN Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:043079/0001 Effective date: 20160426 | 2018-07-13| AS| Assignment|Owner name: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT, ILLINOIS Free format text: SECURITY INTEREST;ASSIGNORS:MICRON TECHNOLOGY, INC.;MICRON SEMICONDUCTOR PRODUCTS, INC.;REEL/FRAME:047540/0001 Effective date: 20180703 Owner name: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT, IL Free format text: SECURITY INTEREST;ASSIGNORS:MICRON TECHNOLOGY, INC.;MICRON SEMICONDUCTOR PRODUCTS, INC.;REEL/FRAME:047540/0001 Effective date: 20180703 | 2018-08-23| AS| Assignment|Owner name: MICRON TECHNOLOGY, INC., IDAHO Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT;REEL/FRAME:047243/0001 Effective date: 20180629 | 2019-10-09| AS| Assignment|Owner name: MICRON TECHNOLOGY, INC., IDAHO Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT;REEL/FRAME:050937/0001 Effective date: 20190731 | 2019-11-12| AS| Assignment|Owner name: MICRON TECHNOLOGY, INC., IDAHO Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT;REEL/FRAME:051028/0001 Effective date: 20190731 Owner name: MICRON SEMICONDUCTOR PRODUCTS, INC., IDAHO Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT;REEL/FRAME:051028/0001 Effective date: 20190731 |
优先权:
[返回顶部]
申请号 | 申请日 | 专利标题 US09/386,971|US6210992B1|1999-08-31|1999-08-31|Controlling packaging encapsulant leakage| US09/789,892|US6395579B2|1999-08-31|2001-02-21|Controlling packaging encapsulant leakage|US09/789,892| US6395579B2|1999-08-31|2001-02-21|Controlling packaging encapsulant leakage| 相关专利
Sulfonates, polymers, resist compositions and patterning process
Washing machine
Washing machine
Device for fixture finishing and tension adjusting of membrane
Structure for Equipping Band in a Plane Cathode Ray Tube
Process for preparation of 7 alpha-carboxyl 9, 11-epoxy steroids and intermediates useful therein an
国家/地区
|